Difference between TVS Diode GPP and OJ chip technology — SUNMATE

For the GPP process structure of TVS diode, the chip p-n junction is protected by passivated glass. Glass is made by sintering and melting the glass powder at about 800 degrees and forming a glass layer after cooling. The glass layer and the chip are fused into one and cannot be separated by mechanical method.

For the OJ process structure of TVS diode, the chip p-n junction is protected by glue. Apply glue to protect the junction, and then cure it at a temperature of about 200 degrees to protect the p-n junction and obtain voltage. OJ's protective glue only covers the surface of p-n junction.

Comparison of glass passivation (GPP) and pickling (OJ) characteristics

Due to the different structures of glass passivation (GPP) and acid pickling (OJ) chip processes, when there is an external force, there will be cold and hot shock. The TVS diode of OJ process structure will produce air leakage due to the non bonding of protective glue and silicon chip, resulting in a certain rate of failure of the device. TVS Diode with GPP process structure has high reliability and still performs well at 150 degree HTRB; The products of OJ process can only withstand HTRB of about 100 degrees.

The quality of TVS Diode depends on the chip technology. At present, there are two main TVS diode chip processes used in the industry: glass passivation (GPP) and acid pickling (OJ).