Sunmate - difference between Schottky, ultrafast recovery and fast recovery diodes — SUNMATE
Sunmate - difference between Schottky, ultrafast recovery and fast recovery diodes
The size, process and withstand voltage level of diodes will affect the on voltage drop and reverse recovery time. Large diodes usually have high VF and TRR, which will cause relatively large losses. Switching diodes are generally divided into "high-speed", "very high-speed" and "ultra-high-speed" diodes by speed. The reverse recovery time decreases with the increase of speed. The TRR of fast recovery diode is hundreds of nanoseconds, while that of ultra-high speed fast recovery diode is tens of nanoseconds. In low-power applications, one option to replace the fast recovery diode is Schottky diode. The recovery time of this diode is almost negligible, and the reverse recovery voltage VF is only half of that of the fast recovery diode (0.4V to 1V). However, the rated voltage and current of Schottky diode are far lower than that of the fast recovery diode, so it can not be used in high-voltage or high-power applications. In addition, Schottky diode has higher reverse leakage current than silicon diode, but these factors do not limit its application in many power supplies.
The recovery time of fast recovery diode is 250-500ns
The recovery time of ultrafast recovery diode is 75-250ns
The recovery time of Schottky diode is almost 0