High Voltage MOSFET (>=400V)Active
SMT5N65EE
TO-263, Active
Jiangsu Sunmate SMT5N65EE — voltage coverage 600V~1700V; Rds(on) as low as 0.1Ω; gate charge Qg as low as 14nC. Superjunction technology breaks the silicon limit, with SiC enabling high-efficiency conversion. Available in TO-220/TO-247/DFN full packages, supporting domestic replacement. Direct original-factory technical support; stable across -55°C~150°C, with consistent batch quality. Sample testing supported.

Status
Active
Package
TO-263
ID(A)
5
V Dss[V]
650
VGS(th)[V]
2.0-4.0
RDSON(MAX)(Ω)
2.8
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SMT5N65EE
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