What is the difference between fast recovery diodes and Schottky diodes? — SUNMATE

What is the difference between fast recovery diodes and Schottky diodes?

There are not many customers in the electronics industry who use fast recovery diodes and Schottky diodes, but the difference between them is very few. As a manufacturer of fast recovery diodes and Schottky diodes,

We have an obligation to provide answers to customers. Below, Youfengwei will briefly explain to you;

Schottky diode is a semiconductor device with low power consumption, high current, and ultra high speed. Its specialty is that the switching speed is very fast, the reverse recovery time can be as small as a few nanoseconds, the forward conduction voltage drop is only about 0.4V, and the rectification current

But it can reach several thousand amperes. So it is suitable for working under low voltage and high current conditions. Silicon dioxide is used to eliminate the electric field in the edge region and improve the withstand voltage of Schottky diodes. The doping concentration of N-type substrate is 100 times higher than that of N-layer, with

There is a very small on state resistance. The N+cathode layer at the bottom of the substrate is used to reduce the contact resistance of the cathode. By adjusting structural parameters, a suitable Schottky diode can be formed between the substrate and the anode metal.

Fast recovery diode is a new type of semiconductor device in recent years, which has advantages such as good switching characteristics, short reverse recovery time, large forward current, small size, and easy installation. It can be used as a high-frequency and high current rectifier and freewheeling diode

Switching power supplies, pulse width modulators (PWM), uninterruptible power supplies (UPS), high-frequency heating, AC motor variable frequency speed regulation and other electronic devices have been widely used.

An important parameter of a fast recovery diode is the reverse recovery time trr, which is defined as the time interval when the current flows through the zero point from forward to reverse, and then from reverse to the specified value Irr. It measures the high-frequency continuous current and rectification

Important technical parameters for device performance.

The internal structure of fast recovery diodes is different from ordinary diodes. It adds base region I between P-type and N-type silicon materials, forming P-I-N silicon wafers. Due to the thin base region and low reverse recovery charge, not only does it greatly reduce the trr value, but also

Reduced transient forward voltage drop, enabling the tube to withstand high reverse operating voltage. The reverse recovery time of fast recovery diodes is generally several hundred nanoseconds, with a forward voltage drop of about 0.6V, a forward current of several amperes to several thousand amperes, and a reverse peak value

The voltage can reach several hundred to several thousand volts.