Definition of fast recovery diodes and Schottky diodes — SUNMATE

Definition of fast recovery diodes and Schottky diodes.

Diodes are one of the most commonly used electronic components, and their types are also diverse. Therefore, it is difficult to distinguish different types of diodes.

Firstly, let's take a look at the definitions of fast recovery diodes and Schottky diodes.

Fast recovery diode refers to a diode with a short reverse recovery time (below 5us), which often adopts gold doping measures in the process. The structure includes PN junction structure and improved PIN structure. Its forward voltage drop is higher than that of ordinary diodes (1-2V), and its reverse voltage withstand is mostly below 1200V. In terms of performance, it can be divided into two levels: fast recovery and ultra fast recovery. The former has a reverse recovery time of hundreds of nanoseconds or longer, while the latter has a recovery time of less than 100 nanoseconds.

Schottky Barrier Diode, also known as Schottky Barrier Diode, is a diode based on the potential barrier formed by the contact between metals and semiconductors. It has a forward voltage reduction (0.4-0.5V), a short reverse recovery time (10-40 nanoseconds), a large reverse leakage current, and a low withstand voltage, generally below 150V. It is commonly used in low voltage situations.

Fast recovery diodes and Schottky diodes are commonly used in switching power supplies.