What are the differences between diodes — SUNMATE
What are the differences between diodes
There are many classifications of diodes, each of which has different functions and is different from each other. When we choose products, we should choose the appropriate products according to their different characteristics. If we forget this important point, then the selected products may not be suitable for us.
1. Rectifier diode
In terms of principle, the DC output obtained from input AC is rectification, and the output current greater than 100mA is usually referred to as rectification based on the magnitude of the rectification current (100mA) as the boundary.
2. Fast recovery diode
It can be understood as fast diode; Due to the thin base region and small reverse recovery charge, it not only greatly reduces the TRR value, but also reduces the transient forward voltage drop, enabling the tube to withstand high reverse operating voltage. Therefore, the reverse recovery time is fast. It is usually used in switching power supply as rectifier diode, and inverter circuit as freewheeling and reverse voltage absorption diode.
3. Switch diode
Under the action of forward voltage, the resistance is very small and in a conductive state, equivalent to a connected switch; Under the action of reverse voltage, the resistance is high and in the cut-off state, like a disconnected switch. Using the switching characteristics of diodes, various logic circuits can be formed.
4. Zener diode
It is made by using the reverse breakdown characteristics of the diode. The voltage at both ends of the circuit remains basically unchanged, playing a role in stabilizing the voltage. It is a product that replaces the electronic diode for voltage stabilization. The diffused or alloy type diode made of silicon is a diode with rapidly changing reverse breakdown characteristic curve, which is used as control voltage and standard voltage.
5. Schottky diode
A diode with a "metal semiconductor junction" having Schottky characteristics. Its forward starting voltage is relatively low. In addition to materials, the metal layer can also be made of materials such as gold, molybdenum, nickel, and titanium. Its semiconductor material is silicon or gallium arsenide, mostly N-type semiconductor. This type of device is conductive by a majority of charge carriers, so its reverse saturation current is much larger than that of PN junctions conductive by a few charge carriers. Since the memory effect of a few carriers in the Schottky diode is very small, its frequency response is only limited by the RC time constant. Therefore, it is an ideal device for high frequency and fast switching.
6. Transient voltage suppression diode
It can provide fast overvoltage protection for circuits, divided into two types: bipolar and unipolar.